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ATOMIKA SIMS 4500
Secondary Ion Mass Spectrometry (SIMS)
Description of Technique
This technique uses a focused primary energetic cesium or oxygen dimer ion beam
to erode atoms from a selected region a sample surface. As the energetic primary ion beam sputters
the sample surface, secondary ions formed are extracted from the sample
and analyzed in a double-focusing mass spectrometer system. The lateral
distribution of the ions is maintained through the spectrometer so that the mass
resolved image of the secondary ions can be projected onto several types of
image detectors. 
SIMS has exceptional sensitivity, depth profiling capability, mass range for H to U, and lateral
resolution of 1um or less. SIMS is best used for analyzing trace species
(dopants and contaminants) in the semiconductor industry.
Advantages Over Other Techniques
Excellent detection limits
Excellent depth resolution
Full periodic table coverage
Rapid ion image acquisition capabilities
Three-dimensional analysis depth profiling and elemental
Application
Dopant profiling and trace contamination of surfaces
thin films
thick films
multilayer structures
interfaces.
Gideon Analytical Labs 80 Loughran Ln Highland NY 12528-2838
845-255-5356 info@gideonlabs.com
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